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ON Semiconductort
High-Power NPN Silicon Transistors
. . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 * High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max)
*MAXIMUM RATINGS
Rating Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current Symbol VCB VEB IC VCEO 2N6338 120 100
2N6338 2N6341*
*ON Semiconductor Preferred Device
25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS
PD, POWER DISSIPATION (WATTS)
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2N6341 180 150 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage 6.0 25 50 10 IB Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 200 1.14 Watts W/C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200
CASE 1-07 TO-204AA (TO-3)
THERMAL CHARACTERISTICS
Characteristic
Symbol JC
Max
Unit
Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 200 175 150 125 100 75 50 25 0 0
0.875
_C/W
25
50
75
100
125
150
175
200
TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
May, 2001 - Rev. 10
Publication Order Number: 2N6338/D
2N6338 2N6341
+ 11 V 0 - 9.0 V tr, tf v 10 ns DUTY CYCLE = 1.0%
t, TIME (ns)
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) 2N6338 2N6341 VCEO(sus) ICEO 100 150 - - - - - - - - Vdc Adc 2N6338 2N6341 50 50 Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) DC Current Gain) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) ICEX 10 1.0 10 Adc mAdc Adc Adc - ICBO IEBO hFE 100 ON CHARACTERISTICS (1) 50 30 12 - - - - - - 120 - 1.0 1.8 1.8 2.5 1.8 - Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Vdc VBE(sat) Vdc Base-Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) VBE(on) fT Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 40 - - - - MHz pF s s s Cob tr tf 300 0.3 1.0 SWITCHING CHARACTERISTICS Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts 0.25 *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. (2) fT = |hfe| * ftest. VCC + 80 V RC 8.0 OHMS 10 s RB 10 OHMS 1N4933 - 5.0 V SCOPE 1000 700 500 300 200 100 70 50 30 20 10 0.3 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 20 30 tr td @ VBE(off) = 6.0 V VCC = 80 V IC/IB = 10 TJ = 25C NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions.
Figure 2. Switching Time Test Circuit
Figure 3. Turn-On Time
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2N6338 2N6341
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) t1 t2 P(pk) JC = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 50 100 200 300 500 1000
0.07 0.05 0.03 0.02 0.01 0.01
DUTY CYCLE, D = t1/t2 10 20 30
Figure 4. Thermal Response
100 50 IC COLLECTOR CURRENT (AMP) , 20 10 5.0 2.0 1.0 0.5 TJ = 200C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 5.0 7.0 10 20 30 dc
200 s 1.0 ms 5.0 ms
0.2 0.1 0.05 0.02 0.01 2.0
2N6338 2N6341 50 70 100 200
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
5.0 3.0 2.0 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 tf ts VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C
5000 3000 2000 C, CAPACITANCE (pF) 1000 700 500 300 200 100 70 50 0.1 Cob Cib TJ = 25C
0.2
0.5
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Turn-Off Time
Figure 7. Capacitance
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2N6338 2N6341
PACKAGE DIMENSIONS
CASE 1-07 TO-204AA (TO-3) ISSUE Z
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
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2N6338/D

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